SQJ488EP-T1-BE3 Integrated Circuit Chip 40V Ultra Low On Resistance

SQJ488EP-T1-BE3 MOSFET Power Electronics

Ultra-Low On-Resistance High Efficiency and Reliability

Product Description: This MOSFET is a N-channel enhancement mode power field effect transistor designed for high current and low voltage applications.

Features and Benefits:
• High current capability
• Low on-resistance
• Fast switching speed
• Improved power and thermal performance

Specifications:
• Drain-Source Voltage (VDS): 40V
• Drain-Source On-Resistance (RDS(on)): 0.7Ω
• Gate-Source Voltage (VGS): ±20V
• Power Dissipation (PD): 88W
• Transconductance (gm): 26.4S
• Operating Temperature: -55°C to +150°C
• Mounting Type: Through Hole
• Package/Case: TO-220AB
• Supplier Device Package: TO-220AB
• Polarity: N-Channel

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