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low on resistance mosfet power electronics
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... to Source Voltage (Vdss): 20V - Gate to Source Voltage (Vgs): ±20V - Continuous Drain Current (Id): 200mA - On-State Resistance (Rds(on)): 150mΩ - ...
2024-12-09 22:29:06
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...MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate ...
2024-12-09 22:28:51
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... in high voltage applications such as automotive, industrial and medical. It features a low on-resistance of 0.045 Ω, fast switching speeds and low ...
2024-12-09 22:29:06
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...power efficiency. This MOSFET features an excellent on-resistance of 1.5 Ohms and a maximum drain current of 16A. It also features a low input ...
2024-12-09 22:28:51
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... of only 7.6nC and an on-resistance of only 35mΩ. The MOSFET is capable of operation at high current levels, up to 10A, making it well-suited for a ...
2024-12-09 22:28:51
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... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low...
2024-12-09 22:29:06
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AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on...
2024-12-09 22:29:06
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... Drain Current (ID): 200mA • Gate-Source Voltage (VGS): -20V to +20V • Gate-Drain Voltage (VGS): ±20V • On-Resistance (RDSON): 0.2Ω • Input ...
2024-12-09 22:29:06
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... Specifications: - Drain-Source Voltage (Vds): 100V - Continuous Drain Current (Id): 24A - Maximum Drain Source On-State Resistance (Rds): 0.05Ω - ...
2024-12-09 22:29:06
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...MOSFET Product Description: The Si2307CDS-T1-GE3 MOSFET is a high-performance power MOSFET designed for use in a variety of power electronics ...
2024-12-09 22:29:06
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