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low gate charge mosfet power electronics
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... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V Vgs (Max) ±30V ...
2024-12-09 22:29:06
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...MOSFET Power Electronics TO-236-3 Device High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) ...
2024-12-09 22:29:06
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... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1 nC @ 5 V Vgs (Max) ±20V Input ...
2024-12-09 22:29:06
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...MOSFET Power Electronics SC-75 High Power Switching Control Solutions Automotive Industrial Applications FET Type N-Channel Technology MOSFET ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Device in TO-236-3 Package High Power Applications N-Channel FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics High Performance Reliable Power Supply Solution TO-236-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics TO-236-3 High Performance Reliable Power Switching Solutions FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Power Single N-Channel 2.4 x 2.9 x 1.0 mm20 V 3.6 A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V ...
2024-12-09 22:29:06
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..., 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V Vgs (Max) ±12V Input ...
2024-12-09 22:29:06
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