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low gate charge mosfet power electronics
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... (Vdss): 30V Id (Continuous Drain Current): 2.3A Rds (On): 0.07 Ohm Vgs (Vgs(th)): 1.8V Pd (Power Dissipation): 1.05W Qg (Total Gate Charge): 0.8nC ...
2024-12-09 22:29:06
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...MOSFET Power Electronics N-Channel OptiMOSTW3 Package PG-TO252-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Device FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain ...
2024-12-09 22:29:06
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...MOSFET Power Electronics P-Channel 60 V 20A 46W Surface Mount Package TO-252AA FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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...Power Module High-Speed Switching High Efficiency and Reliability This IGBT power module from IRG4BC30KDPBF is designed for use in high-power ...
2024-12-09 22:29:41
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... offers a low-voltage single-supply operation from 1.8 V to 5.5 V and high-voltage dual-supply operation from ±2.5 V to ±5.5 V. It offers low power ...
2024-12-09 22:28:51
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...gate driver IC designed to drive a half-bridge of external N-channel MOSFETs for a high-side and low-side. It features an integrated charge pump ...
2024-12-09 22:30:19
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...Power Management ICs Features: -Small size package -Low input voltage: 0.9V to 5.5V -Output voltage range: 0.7V to 5.5V -Output current up to 400mA ...
2024-12-09 22:30:30
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...Electronic Component IC Chips High-Performance CMOS Analog Switch Product Listing: Product: ADG839YKSZ-REEL7 Electronic Component IC Chip Features: ...
2024-12-09 22:28:51
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... speed, low voltage switching applications. It features an on-resistance of 0.7 Ω max, a low power consumption, and a fast switching speed of 8 ns ...
2024-12-09 22:28:51
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