NTR5105PT1G MOSFET Power Electronics TO-236-3 Device High Efficiency Power Conversion

NTR5105PT1G MOSFET Power Electronics TO-236-3 Device High Efficiency Power Conversion

NTR5105PT1G is a N-channel enhancement mode MOSFET which is housed in the TO-236-3 package. It has a low on-resistance of 0.35 Ohms and a low gate charge of 18 nC. It is designed for high speed switching applications such as power supplies, motor control and load switching. The device also has low gate threshold voltage, making it suitable for low power applications. The maximum drain current is 110A and the maximum drain-source voltage is 200V. It has a high temperature rating of 175°C and a low thermal resistance of 1.90°C/W. The NTR5105PT1G is RoHS compliant and is suitable for high frequency switching applications.

The NTR5105PT1G is a MOSFET power electronics device in a TO-236-3 package. It is designed to provide optimal performance in high voltage applications. With its low on-resistance and fast switching times, it is ideal for applications requiring high efficiency and power output.The NTR5105PT1G has a maximum drain-source voltage of 100V and a maximum drain current of 14A. It also has a maximum gate threshold voltage of 1.5V, making it suitable for use with low gate drive voltages. Its maximum drain-source on-resistance is 1.4Ω at 10V and typically 0.6Ω at 4.5V, allowing it to handle large amounts of power with minimal losses.

The NTR5105PT1G is designed for durability and reliability, with a maximum operating temperature of 175°C and an integrated ESD protection circuit. It has a high-frequency switching performance with a maximum turn-on time of 1.3µs and a maximum turn-off time of 2.6µs. This makes it suitable for applications requiring fast switching, such as motor control and power conversion.

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