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Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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low gate charge mosfet power electronics

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low gate charge mosfet power electronics

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...MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 ... 2024-12-09 22:29:06
... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V Vgs (Max) ±20V ... 2024-12-09 22:29:06
... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V Vgs (Max) ±20V ... 2024-12-09 22:29:06
... On) 6V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V Vgs (Max) ±20V ... 2024-12-09 22:29:06
...MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ... 2024-12-09 22:29:06
... and low on-resistance. It features a maximum drain-source voltage of 30V, a maximum drain-source current of 72A, and a maximum drain-gate voltage ... 2024-12-09 22:29:06
... On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V Vgs (Max) ... 2024-12-09 22:29:06
...MOSFET Power Electronics 3-XFLGA Package High Power Electronics Industrial Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ... 2024-12-09 22:29:06
MOSFET Power Electronics SQ2319ADS-T1-BE3 High Performance Low On Resistance Features: • N-Channel Enhancement Mode MOSFET • Low On-Resistance RDS(on) ... 2024-12-09 22:28:51
...MOSFET Power Electronics High Efficiency High Voltage Low On Resistance The IRF3703PBF is a high performance, low on-resistance, N-channel MOSFET ... 2024-12-09 22:28:51
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