MOSFET Power Electronics SQ2319ADS-T1-BE3 High Performance Low On Resistance
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MOSFET Power Electronics SQ2319ADS-T1-BE3 High Performance Low On Resistance
• N-Channel Enhancement Mode MOSFET Applications: • Battery Management System
• Drain-Source Voltage: -20V to -200V • Drain Current: -23A (Tc=25℃) • Gate-Source Voltage: -2.0V to -20V • Drain-Source On-Resistance: 18mΩ (VGS=-10V) • Maximum Power Dissipation: 2.3W (Tc=25℃) • Operating Temperature: -55℃ to +150℃ • Storage Temperature: -55℃ to +150℃
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