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high frequency rf power transistor
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The IRF9Z24NPBF is a power MOSFET transistor that offers a range of features and specifications, including: Low on-state resistance of 0.12 ohms at a ...
2024-12-09 22:28:51
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...-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 0.22A Rds On - Drain-Source Resistance: 0.06 Ohm Power Dissipation: 8W Vgs - Gate...
2024-12-09 22:28:51
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...Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface ...
2024-12-09 22:28:51
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... MOSFET High Performance Power Electronics for Maximum Efficiency Specifications: - VDSS: 100V - ID: 40A - RDS(on): 0.0065Ω - Package: TO-247 - ...
2024-12-09 22:28:51
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Product Listing: IRF7389TRPBF N-Channel Power MOSFET • Technology: N-Channel • Drain-Source Voltage: 100V • Current - Continuous Drain (Id) @ 25°C: ...
2024-12-09 22:29:06
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Product Listing: IRF4104SPBF Power MOSFET Features: • Maximum Drain Source Voltage (Vdss): 100V • Rds (on): 0.070 Ohms • Continuous Drain Current: 30A ...
2024-12-09 22:29:06
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FDS2582 - N-Channel MOSFET Power Electronics The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching ...
2024-12-09 22:29:06
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MOSFET Power Electronics NVMFS5C450NWFAFT1G Description: This Power Electronics MOSFET is designed for high-speed switching applications in automotive...
2024-12-09 22:29:06
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FDMS86350 Power MOSFET The FDMS86350 is a Power MOSFET designed for use in high-performance power electronics applications. The device features an ...
2024-12-09 22:29:06
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Product Listing: FQB34P10TM – N-Channel MOSFET Power Electronics Parameters: • VDSS: 30V • ID: 34A • RDS(on): 0.065Ω • Package: TO-220 • Type: N...
2024-12-09 22:29:06
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