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high frequency rf power transistor
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...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150...
2024-12-09 22:28:51
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NTD24N06LT4G MOSFET Power Electronics Product Description: The NTD24N06LT4G is a low-side MOSFET power electronics device designed to switch power in ...
2024-12-09 22:29:06
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...High Power Output and Low On-Resistance for Enhanced Performance Product Name: IRF135S203 MOSFET Product Description: The IRF135S203 is a high...
2024-12-09 22:28:51
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...Power Electronics High Efficiency and Reliable Operation Product Description: The IRFL014TRPBF is a N-Channel Metal Oxide Semiconductor Field ...
2024-12-09 22:28:51
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IRFI4019H-117P MOSFET Power Electronics High Performance Low On Resistance Product Overview: The IRFI4019H-117P MOSFET is an N-channel enhancement ...
2024-12-09 22:29:06
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NVD5117PLT4G-VF01 MOSFET Power Electronics The NVD5117PLT4G-VF01 is a MOSFET Power Electronics device with a low on-resistance and fast switching ...
2024-12-09 22:29:06
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The FDMS86102LZ is a N-channel Power MOSFET from Fairchild Semiconductor. It is designed to handle high power applications and can operate at up to ...
2024-12-09 22:29:06
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Product Name: FDMC2523P Power MOSFET Product Description: The FDMC2523P is a high efficiency power MOSFET with a wide range of operating temperatures ...
2024-12-09 22:29:06
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NVMFS5C468NT1G MOSFET Power Electronics Product Description: The NVMFS5C468NT1G is a high power MOSFET device designed for power electronics ...
2024-12-09 22:29:06
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... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25...
2024-12-09 22:29:06
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