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high frequency rf power transistor
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Product: IRF2804PBF MOSFET Parameters: - Drain to Source Voltage (Vds): 500V - Drain Current (Id): 4.4A - Gate to Source Voltage (Vgs): +/- 20V - ...
2024-12-09 22:28:51
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...high-frequency synchronous rectification technology to provide a high-efficiency solution in a very small package. It features an input voltage ...
2024-12-09 22:30:30
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... Power Module – High Voltage High Power Capacity IKW50N60DTPXKSA1 IGBT Power Module Product Description: The IKW50N60DTPXKSA1 IGBT Power Module is ...
2024-12-09 22:29:41
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...Power Electronics This International Rectifier IPD053N06NATMA1 is a N-channel Power MOSFET with a maximum drain source voltage of 30 V and a drain ...
2024-12-09 22:29:06
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... Temperature range from -55°C to 175°C • Lead-free RoHS compliant • Halogen-free • Fast switching and robust performance • Suitable for high ...
2024-12-09 22:29:06
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...Power Rating: 1.8KW • Operating Temperature: -40°C to 125°C • Storage Temperature: -55°C to 150°C • Switching Frequency: 50 kHz • Isolation Voltage...
2024-12-09 22:29:41
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...Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a ...
2024-12-09 22:29:41
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FDS4465 MOSFET Power Electronics The FDS4465 MOSFET is an advanced power electronics solution designed for a wide range of applications. This MOSFET ...
2024-12-09 22:29:06
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FQD2N90TM MOSFET Power Electronics Product Description: The FQD2N90TM MOSFET Power Electronics is a high-power, high-performance device ideal for a ...
2024-12-09 22:29:06
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IPB072N15N3G MOSFET Power Electronics High Power High Efficiency Low Losses This N-Channel MOSFET is a versatile, high-performance transistor for ...
2024-12-09 22:29:06
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