FQB34P10TM Mosfet Transistor High Performance High Efficiency Switching Solutions

Product Listing:

FQB34P10TM – N-Channel MOSFET Power Electronics

Parameters:

• VDSS: 30V
• ID: 34A
• RDS(on): 0.065Ω
• Package: TO-220
• Type: N-Channel MOSFET
• Application: Power Electronics
• Gate Charge (Qg) (Max): 22nC
• Qg @ 10V (Max): 16.2nC
• VGS(th) (Max): ±20V
• Input Capacitance (Ciss) (Max) @ VDS: 645pF
• Power Dissipation (Max): 4.8W
• Operating Temperature: -55°C to +150°C
• Mounting Style: Through Hole

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