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cellular rf power transistors
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Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is ...
2024-12-09 22:28:51
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IRFR3806TRPBF N-Channel MOSFET Product Features: • 100V Drain-Source Voltage • RDS(on) = 4.3mΩ (Max) @ VGS = 10V • Fast Switching Speed • Low Gate ...
2024-12-09 22:29:06
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AON7934 Dual N-Channel Enhancement Mode MOSFET Product Parameters: • Max Rds(on): 0.2Ω@Vgs=4.5V • Gate Charge: 5nC • Drain-Source Breakdown Voltage: ...
2024-12-09 22:29:06
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Product Description: 1. N-Channel Enhancement Mode Field Effect Transistor 2. Maximum Drain Source Voltage: 200V 3. Drain Current: 31A 4. RDS(on): 0...
2024-12-09 22:29:06
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FDMS86350 - N-Channel Automotive MOSFET The FDMS86350 is an N-channel Power Trench® MOSFET designed for automotive applications. It offers high ...
2024-12-09 22:29:06
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Product Listing: FDMS86163P – N-Channel Enhancement Mode Power MOSFET Features: • 100V Drain-Source Voltage • 25A Continuous Drain Current • 200mΩ @ ...
2024-12-09 22:29:06
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Product Description: The NTD25P03LT4G is a P-channel Logic Level MOSFET intended for use as a load switch in power management applications. It ...
2024-12-09 22:29:06
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FDS6673BZ N-Channel MOSFET Power Electronics Product Features: • Logic level gate drive • Low gate charge • Low on-state resistance • Fast switching • ...
2024-12-09 22:29:06
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...: -50 dBm - Low Power Consumption: 2.1 mW - High Linearity: IM3 -90 dBc - Wide Supply Range: 2.7V to 5.5V Applications: - Cellular and Wireless ...
2024-12-09 22:30:07
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...power, multi-band RF transceiver designed for the 2.4GHz ISM band. It is ideal for applications including Wireless Local Area Networks (WLANs), ...
2024-12-09 22:30:19
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