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cellular rf power transistors
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NVMFS5C468NT1G MOSFET Power Electronics Product Description: The NVMFS5C468NT1G is a high power MOSFET device designed for power electronics ...
2024-12-09 22:29:06
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FDN308P MOSFET Power Electronics Product Description: The FDN308P is an N-channel enhancement mode power MOSFET designed for use in applications that ...
2024-12-09 22:29:06
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... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25...
2024-12-09 22:29:06
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...Power Isolator IC High Speed Low Power Reliable Isolation Solution Voltage - Isolation 3750Vrms Current Transfer Ratio (Min) 100% @ 5mA Current ...
2024-12-09 22:30:30
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Product description list for the IRFB7440PBF: 1.Model Number: IRFB7440PBF 2. Type: Power MOSFET 3.Package: TO-220AB 4. Technology: N-channel 5. Vds - ...
2024-12-09 22:28:51
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... Current: 110A • Drain-Source On-State Resistance: 0.033 Ohms • Maximum Operating Temperature: +175 °C • Mounting Type: Through Hole • Transistor ...
2024-12-09 22:28:51
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...Power Output and Low On-Resistance for Enhanced Performance Product Name: IRF135S203 MOSFET Product Description: The IRF135S203 is a high...
2024-12-09 22:28:51
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Product Listing: IRF3205PBF N-Channel MOSFET Product Features: • Maximum Drain Source Voltage (Vdss): 55V • Maximum Gate Source Voltage (Vgs): 20V • ...
2024-12-09 22:28:51
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Product Listing: IRFB7537PBF MOSFET Product Features: • N-Channel MOSFET • High Current Capacity • Low RDS(on) • Low Gate Charge • Low Threshold ...
2024-12-09 22:28:51
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...Continuous Drain (Id) @ 25°C: 12A • Power – Max: 160W • Rds On (Max) @ Id, Vgs: 0.06 Ohm @ 12A, 10V • Vgs(th) (Max) @ Id: 4V @ 250uA • Transistor ...
2024-12-09 22:28:51
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