Mosfet Transistor FDN308P High Performance N Channel MOSFETS

FDN308P MOSFET Power Electronics

Product Description:

The FDN308P is an N-channel enhancement mode power MOSFET designed for use in applications that require high switching performance and excellent power dissipation. This device is designed to deliver high current and low on-state resistance at high frequencies. It features a low gate-to-drain charge, low gate-to-source charge, and a fast turn-on time. The FDN308P is ideal for fast switching and high frequency power conversion applications.

Features:

• N-channel enhancement mode
• Low on-state resistance
• Low gate-to-drain charge
• Low gate-to-source charge
• Fast turn-on time
• High current capability
• High frequency power conversion applications

Specifications:

• Drain-source voltage: 30V
• Continuous drain current: 8A
• Max. Drain-source on-state resistance: 0.08Ω
• Gate-source threshold voltage: 1.3V
• Maximum operating temperature: 150°C
• Packaging type: TO-220

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