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cellular rf power transistors
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...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • ...
2024-12-09 22:28:51
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NTGS4141NT1G MOSFET Power Electronics Transistor Power Single N-Channel TSOP-6 30 V 7.0 A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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FQA13N80-F109 MOSFET Power Electronics TO-3P-3 Transistor High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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FDD86250 MOSFET Power Electronics TO-252-3 Transistor for Power Switching and Voltage Regulation FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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FREESCALE FDMS86300 N-Channel MOSFET Transistor for High Power Reliable and Efficient Power Electronics Applications FET Type N-Channel Technology ...
2024-12-09 22:29:06
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NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications Drain to Source Voltage (Vdss) ...
2024-12-09 22:29:06
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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor ...
2024-12-09 22:29:06
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...: 60V • Continuous Drain Current: -11A • Power Dissipation: 4.5W • Operating Junction Temperature: -55°C to 175°C • On Resistance RDS(ON): 0.042Ω • ...
2024-12-09 22:29:06
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... MOSFET Power Electronics - Optimized For High Efficiency And Reliability AO4612 - Power MOSFET Transistor The AO4612 is a high-performance, low...
2024-12-09 22:29:06
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