FQA13N80-F109 MOSFET Power Electronics TO-3P-3 Transistor High Power Applications

FQA13N80-F109 is a high-performance, high-temperature, low-loss N-channel MOSFET that features an advanced design for maximum power density and superior efficiency. The device is housed in a TO-3P-3 package which makes it suitable for high-temperature applications. It has a drain-source voltage rating of 800V and a drain current rating of 13A.

It also has a low on-resistance of 0.7 ohms, a low gate charge of 11nC, and a fast switching speed. The FQA13N80-F109 is an ideal choice for power electronics applications such as solar inverters, motor drives, and DC-DC converters. It provides improved efficiency, power density, and reliability in these applications.

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