181 - 190 of 279
ad9361bbcz high power rf transistor
Selling leads
|
...High-Performance MOSFET Power Electronics Solution for Maximum Efficiency Product Description: The IRF7480MTRPBF is a N-Channel MOSFET transistor ...
2024-12-09 22:28:51
|
|
... designed for high-density applications. This device offers low on-state resistance, fast switching speed, and improved maximum ratings. It is ...
2024-12-09 22:28:51
|
|
... of applications. It has a low gate charge and low gate-to-drain capacitance and is suitable for high-frequency switching applications. It features ...
2024-12-09 22:28:51
|
|
...High-Performance Power Electronics Solution for High Current Applications Parameters: • Package: TO-220 • Transistor Type: N-Channel • Vds – Drain...
2024-12-09 22:29:06
|
|
FDN308P MOSFET Power Electronics Product Description: The FDN308P is an N-channel enhancement mode power MOSFET designed for use in applications that ...
2024-12-09 22:29:06
|
|
...Power Electronics Product Description: The IRFB4019PBF is a high-performance, silicon-based MOSFET power electronics device from International ...
2024-12-09 22:29:06
|
|
...Power Electronics High Performance Low-Power Solution Product Parameters: Drain-Source Voltage: 30V Continuous Drain Current: 30A Drain-Source On...
2024-12-09 22:28:51
|
|
...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150...
2024-12-09 22:28:51
|
|
Product Listing: FQD3P50TM MOSFET Power Electronics Product Description: FQD3P50TM is a high-performance MOSFET power electronics device that provides ...
2024-12-09 22:29:06
|
|
... of 1.2 mΩ. Its low gate charge and fast switching speed make it ideal for high-current and high-frequency applications. Features: • Low RDS(on): 1...
2024-12-09 22:29:06
|