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2gb integrated circuit ic
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Product Details DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, ...
2024-12-09 22:41:44
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Product Details OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The ...
2024-12-09 22:41:44
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Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67...
2024-12-09 22:41:44
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Product Details DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, ...
2024-12-09 22:41:44
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Product Details DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The ...
2024-12-09 22:41:44
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Product Details FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal ...
2024-12-09 22:41:44
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Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V ● High speed data ...
2024-12-09 22:41:44
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Product Details DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has ...
2024-12-09 22:41:44
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