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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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Miss.Zhao
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IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS61NLP51236B-200B3LI
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 18Mbit
Memory Organization 512K x 36
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page -
Access Time 3 ns
Voltage - Supply 3.135V ~ 3.465V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 165-TBGA
Supplier Device Package 165-TFBGA (13x15)
Detailed Product Description

Product Details

 

DESCRIPTION

The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M words by 18 bits, fabricated with ISSIs advanced CMOS technology.

 

 

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 209- ball (x72) PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available

 

Specifications

AttributeAttribute Value
ManufacturerISSI
Product CategoryMemory ICs
Series-
PackagingTray Alternate Packaging
Package-Case165-TBGA
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply3.135 V ~ 3.465 V
Supplier-Device-Package165-TFBGA (13x15)
Memory Capacity18M (512K x 36)
Memory-TypeSRAM - Synchronous
Speed200MHz
Format-MemoryRAM

Descriptions

SRAM - Synchronous Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 165-TFBGA (13x15)
SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3ns 165-Pin TFBGA
SRAM 18Mb, 200Mhz 512K x 36 Sync SRAM
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