IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc
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Detailed Product Description
Product Details
DESCRIPTIONThe 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES• 100 percent bus utilization• No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Power Down mode • Common data inputs and data outputs • CKE pin to enable clock and suspend operation • JEDEC 100-pin TQFP, 165-ball PBGA and 209- ball (x72) PBGA packages • Power supply: NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) • JTAG Boundary Scan for PBGA packages • Industrial temperature available • Lead-free available
Specifications
DescriptionsSRAM - Synchronous Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns
165-TFBGA (13x15) SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3ns 165-Pin TFBGA SRAM 18Mb, 200Mhz 512K x 36 Sync SRAM |
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