IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc
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Detailed Product Description
Product Details
DESCRIPTIONThe 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES• 100 percent bus utilization• No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Power Down mode • Common data inputs and data outputs • CKE pin to enable clock and suspend operation • JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages • Power supply: NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) • JTAG Boundary Scan for PBGA packages • Industrial temperature available • Lead-free available
Specifications
Functional compatible componentForm,Package,Functional compatible component
DescriptionsSRAM - Synchronous Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns
100-TQFP (14x20) SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v |
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