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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS61NLP25636A-200TQLI
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page -
Access Time 3.1 ns
Voltage - Supply 3.135V ~ 3.465V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 100-LQFP
Supplier Device Package 100-LQFP (14x20)
Detailed Product Description

Product Details

 

DESCRIPTION

The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

 

 

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available

 

Specifications

AttributeAttribute Value
ManufacturerISSI
Product CategoryMemory ICs
SeriesIS61NLP25636A
TypeSynchronous
PackagingTray Alternate Packaging
Unit-Weight0.023175 oz
Mounting-StyleSMD/SMT
Package-Case100-LQFP
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply3.135 V ~ 3.465 V
Supplier-Device-Package100-TQFP (14x20)
Memory Capacity9M (256K x 36)
Memory-TypeSRAM - Synchronous
Speed200MHz
Data-RateSDR
Access-Time3.1 ns
Format-MemoryRAM
Maximum Operating Temperature+ 85 C
Operating temperature range- 40 C
Interface-TypeParallel
Organization256 k x 36
Supply-Current-Max280 mA
Supply-Voltage-Max3.465 V
Supply-Voltage-Min3.135 V
Package-CaseTQFP-100
Maximum-Clock-Frequency200 MHz

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part#DescriptionManufacturerCompare
IS61NLP25636A-200TQI
Memory
256KX36 ZBT SRAM, 3.1ns, PQFP100, TQFP-100Integrated Silicon Solution IncIS61NLP25636A-200TQLI vs IS61NLP25636A-200TQI
IS61NLP25636A-200TQL
Memory
ZBT SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100Integrated Silicon Solution IncIS61NLP25636A-200TQLI vs IS61NLP25636A-200TQL

Descriptions

SRAM - Synchronous Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-TQFP (14x20)
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v
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