China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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robust design high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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robust design high power mosfet

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... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-11 00:37:58
... and durable choice for your power management needs. It is also RoHS compliant, ensuring that it is safe and environmentally friendly to use. One ... 2025-07-11 00:37:58
...High Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
...its robustness and durability. With its low junction capacitance, it can help reduce power losses and enhance the overall efficiency of a system. ... 2025-07-11 00:37:58
...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-11 00:37:58
...High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS... 2025-07-11 00:37:58
...High Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS... 2025-07-11 00:37:58
Large EMI Margin Super Junction MOSFET For High Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
...MAX Typ Typ CS10N60A2 TO-220F N 10 600 ±30 2 4 660 900 32 1609 Product Description: This MOSFET can handle high voltage and is an ideal component ... 2025-02-08 13:29:45
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