China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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robust design high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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robust design high power mosfet

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...MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) ... 2025-07-11 00:37:58
... for use in harsh environments. It is designed with fast switching speed, high efficiency, and low reverse recovery time, which means that it can ... 2025-07-11 00:37:58
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