China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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robust design high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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robust design high power mosfet

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High Voltage Levels Super Junction MOSFET 650V TO-220F For Power Supply Product Description: With its much lower Ron*A performance, the Super Junction ... 2025-07-11 00:37:58
...Robustness in Challenging Environments Product Description: The low Rds(ON) resistance of this MOSFET makes it an attractive option for automotive ... 2025-07-11 00:37:58
... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low ... 2025-07-11 00:37:58
... Typ Typ CS28N50A6 TO-247 N 28 500 ±30 2 4 200 240 Product Description: With 100% avalanche tested technology, this MOSFET can withstand high ... 2025-02-08 13:29:27
... Typ Typ CS10N65A2 TO-220F N 10 650 ±30 2 4 820 950 Product Description: With its low ON resistance, the CS MOSFET minimizes power loss and ... 2025-02-08 13:29:30
High Efficiency Power IGBT For Solar Panels Or Batteries Into AC Power Product Description: This High Power IGBT is equipped with faster switching ... 2025-07-11 00:37:58
...High Voltage Low On-Resistance MOSFET Product Description: One of the standout features of this MOSFET is its low ON resistance, which ensures low ... 2025-02-08 13:29:27
...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ... 2025-07-11 00:37:58
...High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal Management. They are ... 2025-07-11 00:37:58
...MOSFET High Frequency Cool Mos For Motor Driver Product Description: One of the key features of the Lingxun Super Junction MOSFET is its ultra low ... 2025-07-11 00:37:58
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