China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power semiconductor discrete devices

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Product Description: High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures ... 2025-07-11 00:37:58
...Power MOSFET TO-247 For Uninterruptible Power Supply Product Description: This series MOSFET is a type N device that is specifically designed for ... 2025-07-11 00:37:58
...Power IGBT For Consumer Electronics Product Description: This IGBT device comes in a TO-247 package type that is easy to install and maintain. The ... 2025-07-11 00:37:58
Efficient Speed Control High Power IGBT For Flash Light Device *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
... power loss and high efficiency. The device's package type is TO-247, which is a popular package type in the electronics industry. Its TO-247 ... 2025-07-11 00:37:58
...Power MOSFET Power Management Solution For Industrial Applications Features: High Power MOSFET is perfect for use in switching power supply ... 2025-07-11 00:37:58
Durable Silicon Carbide Semiconductor High Power Transistor SiC MOS Multifunctional *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html... 2025-07-11 00:37:58
...Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of ±30V, ... 2025-07-11 00:37:58
... inverter PFC applications, uninterruptible power supplies, solar inverters resonant converters, UPS boost portable power station energy storage, ... 2025-07-11 00:37:58
...Power MOSFET Empowering Your Power Solutions For Maximum Efficiency Product Description: The MOSFET is a dual channel device that is designed to ... 2025-07-11 00:37:58
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