China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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power semiconductor discrete devices

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power semiconductor discrete devices

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... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering ... 2025-07-11 00:37:58
... to 60KHz. This faster switching speed allows for more efficient motor control and reduces the risk of damage to the device. Our High Power IGBT is ... 2025-07-11 00:37:58
... range of 20KHz-60KHz, this device is capable of handling a wide range of applications, from consumer electronics to power generation and ... 2025-07-11 00:37:58
.... With low Rds(ON) resistance, it can reduce power loss and increase system efficiency in devices. This feature makes it an ideal choice for ... 2025-07-11 00:37:58
... loss device that provides efficient power management and low heat dissipation, resulting in a longer lifespan for your device. This MOSFET is ... 2025-07-11 00:37:58
... power consumption. The use of high-quality silicon material ensures reliable performance and long-term durability. With its low power loss, this ... 2025-07-11 00:37:58
.... Max. TYP MAX TYP MAX Typ Typ LG80N10AP TO-220C 1 N 80 100 ±20 1.2 2.5 5.6 6.4 7.5 9.4 Product Description: With its low power consumption, the ... 2025-02-08 13:28:59
...means that it consumes less energy compared to other electronic components, making it an excellent choice for energy-efficient devices and ... 2025-07-11 00:37:58
.... They are also Lead-Free and RoHS compliant, making them environmentally friendly and safe to use. One of the key features of our Low Voltage ... 2025-07-11 00:37:58
... saturation velocity. These properties make the Silicon Carbide MOSFET ideal for high-frequency applications. It is also highly efficient, which is ... 2025-07-11 00:37:58
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