China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power semiconductor discrete devices

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...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-11 00:37:58
Product Description: Voltage Low Leakage Junction Capacitance High Temperature Resistance Semiconductor Bolstering Technology The High-temperature ... 2025-07-11 00:37:58
...Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
...semiconductor devices, this MOSFET is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet strict ... 2025-07-11 00:37:58
Converter Power IGBT 650V-1200V Energy Saving For Switching Switch Product Description: The High Power IGBT is a reliable and efficient semiconductor ... 2025-07-11 00:37:58
...Power IGBT High Ruggedness Performance For PFC Applications Product Description: The High Power IGBT is a type of device that is used in many ... 2025-07-11 00:37:58
... 4.0 20 - - - 150 150 Product Description: The MBR2060FCT Schottky Barrier Diodes come in a TO-220F package, which is a popular package type for ... 2025-02-08 13:30:15
...Power Mosfet For Power Adaptor​ Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test ... 2025-07-11 00:37:58
.... As a leading manufacturer in the semiconductor industry. As a MOSFET, this product offers several benefits over traditional transistor switches. ... 2025-07-11 00:37:58
20A 650V 150mΩ Stability And Uniformity Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F ... 2025-07-11 00:37:58
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