China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power control high power igbt

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Thermal Stability Ultrafast Recovery Diodes For High Power Equipment MUR1220CT Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125... 2025-07-11 00:37:58
10A45V MBR1045FCT Schottky Barrier Diodes TO-220F For Power Supply Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃... 2025-02-08 13:30:16
Large EMI Margin Super Junction MOSFET For High Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
... to other electronic components, making it an excellent choice for energy-efficient devices and applications. Additionally, the MOSFET has a low ... 2025-07-11 00:37:58
...Power Transistor Anti EMI For SMPS Product Description: One of the standout features of this Super Junction MOSFET is its 100% avalanche testing. ... 2025-07-11 00:37:58
... and lower power dissipation. This means that your devices will run more efficiently, saving you energy and reducing the risk of overheating or ... 2025-07-11 00:37:58
High Temperature Tolerance Silicon Carbide MOSFET For Electric Power *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-11 00:37:58
High Breakdown Voltage Silicon Carbide MOSFET For Power Inverters *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-11 00:37:58
Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super ... 2025-07-11 00:37:58
20A150V MBR20150DC Low Forward Voltage TO-263 Miniature Switched Mode Power Supplies Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR ... 2025-07-11 00:37:58
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