China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power control high power igbt

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...High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-10 11:19:53
... Typ CS4N65A2 TO-220F N 4 650 ±30 2 4 2220 2570 Product Description: One of the key features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:46
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
...High Voltage MOSFET N-Type CS20N50A8 TO-220F For Power Supplies Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg ... 2025-02-08 13:29:43
4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252... 2025-07-11 00:37:58
High Current Capability Schottky Barrier Diodes For DC/DC conerters Features • Low forward voltage • High current capability • High forward surge ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
Product Description: Voltage Low Leakage Cool Mos The Semiconductor For Power Applications This particular product is a Type N semiconductor with low ... 2025-07-11 00:37:58
4A650V CS4N65A4 High Voltage MOSFET N Type For Power Supplies TO-251 Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) ... 2025-02-08 13:29:33
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