China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power control high power igbt

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7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC... 2025-07-11 00:37:58
Low Reverse Transfer Capacitance High Voltage MOSFET For Switched Mode Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
High Temperature Tolerances Silicon Carbide MOSFET For Power Supply Units Product Description: The Lingxun SiC MOSFET is perfect for power inverters, ... 2025-07-11 00:37:58
...Power Management Power Switches Product Description: One of the key features of this product is its low forward voltage, which results in high ... 2025-07-11 00:37:58
...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very ... 2025-07-11 00:37:58
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-11 00:37:58
... speeds and low power dissipation. With its low RDS(ON) resistance, our MOSFET product can handle high current loads with minimal power loss, ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
...High Current Low VF Schottky Diodes For Power Supply Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) ... 2025-07-11 00:37:58
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