China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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power applications 1200v igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power applications 1200v igbt

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...Power MOSFET N-Channel Multiscene Industrial Mos N-Channel Enhancement Mode Power MOSFET Part No.:CS3N50A2 Package:TO-251 MAIN CHARACTERISTICS ID... 2025-07-28 00:25:39
... charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar ... 2025-07-28 00:25:39
...Power Semiconductor product can handle high voltage applications with ease. It is also designed with low junction capacitance, which makes it ... 2025-07-28 00:25:40
... high temperatures makes it suitable for use in harsh environments. The device is designed to handle high voltage applications, making it ideal for ... 2025-07-28 00:25:39
...its robustness and durability. With its low junction capacitance, it can help reduce power losses and enhance the overall efficiency of a system. ... 2025-07-28 00:25:39
...high-frequency applications that require fast switching speeds. Its low leakage feature ensures minimal power loss, enhancing the overall ... 2025-07-28 00:25:39
...Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V ... 2025-07-28 00:25:39
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-28 00:25:39
...Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS:650V ... 2025-07-28 00:25:39
Product Description: Manufactured by Lingxun Microelectronics, a leading manufacturer of high-quality semiconductor devices, this MOSFET is brand new ... 2025-07-28 00:25:39
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