China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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power applications 1200v igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power applications 1200v igbt

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...Power MOSFET Power Management Solution For Industrial Applications Features: High Power MOSFET is perfect for use in switching power supply ... 2025-07-11 00:37:58
... with ease. The N-type design ensures low on-resistance and high current handling capability, making it an ideal choice for power electronics ... 2025-07-11 00:37:58
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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
...application High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction ... 2025-07-11 00:37:58
... power inverter, and dual-channel MOSFET. It is commonly used in power supplies, motor drives, and audio amplifiers. This product is highly ... 2025-07-11 00:37:58
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ ... 2025-07-11 00:37:58
...Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON... 2025-07-11 00:37:58
...Power MOSFET Ideal For Power Factor Correction Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy ... 2025-07-11 00:37:58
...Power Mosfet For Power Adaptor​ Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test ... 2025-07-11 00:37:58
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