China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power applications 1200v igbt

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...Powered Devices Low Voltage MOSFET 60V Product Description: One of the key benefits of this MOSFET is its low Rds(ON) resistance. This means that ... 2025-07-28 00:25:39
Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super ... 2025-07-28 00:25:39
...Power Supply N-channel Super Junction MOSFET Part No.:LC60R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:600V RDSON-typ VGS=10V:510mΩ ... 2025-07-28 00:25:39
Schottky Barrier Diodes For Adapter Applications Switching power supply *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-28 00:25:39
Ultra- Recovery Time 15-35ns Diodes For Power Equipment Applications *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-28 00:25:39
... 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this MOSFET is its low ON resistance, which results in low loss and low ... 2025-02-08 13:29:28
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-28 00:25:39
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R075F Package:TO-220F MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ ... 2025-07-28 00:25:39
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:30A VDSS:650V RDSON-typ VGS=10V:120mΩ ... 2025-07-28 00:25:39
...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ... 2025-07-28 00:25:40
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