China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power solar inverter transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power solar inverter transistor

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...Power Supply N-channel Super Junction MOSFET Part No.:LC60R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:600V RDSON-typ VGS=10V:510mΩ ... 2025-07-11 00:37:58
... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ... 2025-07-11 00:37:58
High Breakdown Voltage Silicon Carbide SBD For Data Center Features ·Negligible reverse recovery ·High surge current ·Positive temperature coefficient ... 2025-07-11 00:37:58
... power station Trench and field-stop technology • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching ... 2025-07-11 00:37:58
9A500V CS9N50A2 TO-220F High Voltage Mosfet N Channel Power Transistors Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ... 2025-02-08 13:29:44
...Low VF Schottky For Power Supply And Solar Energy Product Description: One of the key features of the Low VF Schottky product is its high current ... 2025-07-11 00:37:58
High Temperature Tolerances Silicon Carbide MOSFET For Power Supply Units Product Description: The Lingxun SiC MOSFET is perfect for power inverters, ... 2025-07-11 00:37:58
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
... speeds and low power dissipation. With its low RDS(ON) resistance, our MOSFET product can handle high current loads with minimal power loss, ... 2025-07-11 00:37:58
50A 650V Reliable And Rugged Low Frequency Power IGBT For Portable Power Station MAIN CHARACTERISTICS Ic @TC=100℃ 50A VCE 650V VCE(sat)-typ 1.65V ... 2025-07-11 00:37:58
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