China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power solar inverter transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power solar inverter transistor

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...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • ... 2025-07-11 00:37:58
...High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS... 2025-07-11 00:37:58
...High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V ... 2025-07-11 00:37:58
... with less power loss. This feature makes it highly efficient, making it suitable for applications where high efficiency is a must. It is perfect ... 2025-07-11 00:37:58
...High Power IGBT High Speed Switching For General Inverter N-Channel Enhancement Mode Power IGBT LGT25N120SB FEATURES • Trench and field-stop ... 2025-07-11 00:37:58
... power loss and high efficiency. The device's package type is TO-247, which is a popular package type in the electronics industry. Its TO-247 ... 2025-07-11 00:37:58
...High Power MOSFET Silicon Power Transistors Product Description: One of the most important features of this MOSFET is its high switching speed. ... 2025-07-11 00:37:58
...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ... 2025-07-11 00:37:58
...High Power MOSFET Surface Mount Industrial Mosfet Transistor Product Description: Our High Power MOSFET is designed to operate in a wide temperatur... 2025-07-11 00:37:58
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