China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power solar inverter transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power solar inverter transistor

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...Power IGBT 650V-1200V Energy Saving For Switching Switch Product Description: The High Power IGBT is a reliable and efficient semiconductor device ... 2025-07-11 00:37:58
... power loss when the semiconductor is switched on and off. It also makes it ideal for use in high-frequency applications, such as renewable energy ... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:30A VDSS:650V RDSON-typ VGS=10V:120mΩ ... 2025-07-11 00:37:58
...High Current Cool Mos N-channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68m... 2025-07-11 00:37:58
Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
...Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed ... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R075F Package:TO-220F MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ ... 2025-07-11 00:37:58
...Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from ... 2025-07-11 00:37:58
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