China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel

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...High Power MOSFET High Efficiency And Performance Applications: This product is manufactured in China by LX, a trusted name in the electronics ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...High Power MOSFET N Channel Stable For Motor Driver Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche ... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...High Power MOSFET N-Channel Multiscene Industrial Mos N-Channel Enhancement Mode Power MOSFET Part No.:CS3N50A2 Package:TO-251 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
...Power High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high voltages and ... 2025-07-11 00:37:58
...Channel High Power MOSFET Surface Mount Industrial Mosfet Transistor Product Description: Our High Power MOSFET is designed to operate in a wide ... 2025-07-11 00:37:58
... EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national ... 2025-07-11 00:37:58
... SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech ... 2025-07-11 00:37:58
...High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • ... 2025-07-11 00:37:58
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