China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel

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...Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERI... 2025-07-11 00:37:58
...Channel Super Junction MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERISTICS ID:5A ... 2025-07-11 00:37:58
...Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES ... 2025-07-11 00:37:58
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-11 00:37:58
...Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed ... 2025-07-11 00:37:58
...High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-10 11:19:53
... Typ Typ CS20N50A6 TO-247 N 20 500 ±30 2 4 210 270 Product Description: This N-type MOSFET is capable of handling high voltage, with a gate-source ... 2025-02-08 13:29:39
... Typ CS10N65A2 TO-220F N 10 650 ±30 2 4 820 950 Product Description: With its low ON resistance, the CS MOSFET minimizes power loss and maximizes ... 2025-02-08 13:29:30
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
... 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this MOSFET is its low ON resistance, which results in low loss and low ... 2025-02-08 13:29:28
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