China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel

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11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant ... 2025-07-11 00:37:58
...Power IGBT For Industrial Applications High voltage power IGBT, High voltage power cool mos, and high voltage discrete devices are some of the key ... 2025-07-11 00:37:58
... and currents efficiently, with robust thermal management. This semiconductor is no exception, and its high voltage capabilities make it perfect ... 2025-07-11 00:37:58
... benefits of high voltage power semiconductors is their ability to handle high voltages and currents efficiently. They are ideal for use in high ... 2025-07-11 00:37:58
...Power Management Features • Positive temperature coefficient • High speed switching • Low collector to emitter saturation voltage • Easy parallel ... 2025-07-11 00:37:58
High Power MOSFET Power Management Solution For Industrial Applications Features: High Power MOSFET is perfect for use in switching power supply ... 2025-07-11 00:37:58
... power loss and high efficiency. The device's package type is TO-247, which is a popular package type in the electronics industry. Its TO-247 ... 2025-07-11 00:37:58
...High Power MOSFET Silicon Power Transistors Product Description: One of the most important features of this MOSFET is its high switching speed. ... 2025-07-11 00:37:58
...High Power MOSFET TO-247 For Uninterruptible Power Supply Product Description: This series MOSFET is a type N device that is specifically designed ... 2025-07-11 00:37:58
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