China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel

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... 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this MOSFET is its 100% avalanche tested design, which ensures that it ... 2025-02-08 13:28:40
Reliable and Rugged Inverter IGBT Enhancement Mode N Channel Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ... 2025-07-28 00:25:39
... Typ Typ LT50N06AP TO-220C 1 N 50 60 ±20 1 2.5 12 17 16 25 Product Description: In addition to its low power consumption, the Low Voltage MOSFET is ... 2025-04-01 14:35:05
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-28 00:25:39
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R075F Package:TO-220F MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ ... 2025-07-28 00:25:39
... Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN CHARACTERISTICS ID:11A ... 2025-07-28 00:25:39
... ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power Supply Support and Services: Silicon ... 2025-07-28 00:25:39
...Low VF Schottky For Power Supply And Solar Energy Product Description: One of the key features of the Low VF Schottky product is its high current ... 2025-07-28 00:25:39
Energy Storage Low Voltage MOSFET Practical N Channel High EAS Capability *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-28 00:25:39
... TO-220C 1 N 120 100 ±20 2 4 4.5 5.62 Product Description: One of the primary advantages of using this MOSFET is that it offers improved system ... 2025-02-08 13:28:59
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