China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power n channel

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel

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...Power Applications This particular product is a Type N semiconductor with low junction capacitance, making it ideal for high voltage applications. ... 2025-07-11 00:37:58
Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100... 2025-07-11 00:37:58
Multiscene Insulated Gate Bipolar Transistor Inverter For Uninterruptible Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
... dissipation, saving you money on cooling expenses. With a low Rds(ON), you can be sure that your device is not wasting energy, making it an ideal ... 2025-04-01 14:35:07
...Fast Switching • Low ON Resistance • Low Gate Charge APPLICATIONS • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply(UPS) • Power ... 2025-02-12 07:30:10
Semiconductor Device Ultra High Voltage IGBT With High Input Impedance *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V... 2025-04-01 14:35:10
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:30A VDSS:650V RDSON-typ VGS=10V:120mΩ ... 2025-07-11 00:37:58
...High Current Cool Mos N-channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68m... 2025-07-11 00:37:58
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