China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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faster switching high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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faster switching high power igbt

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... attribute enables it to handle high current loads with minimal voltage drops. As a result, it can help to reduce power loss and improve the ... 2025-07-11 00:37:58
...Switches In Battery-Powered Devices Low Voltage MOSFET 60V Product Description: One of the key benefits of this MOSFET is its low Rds(ON) ... 2025-07-11 00:37:58
... TO-252 1 10 200 5 0.85 0.92 0.6 5 2 - - 130 150 Product Description: Our Schottky Barrier Diodes are also cost-effective, providing a high-quality ... 2025-07-11 00:37:58
... power consumption. The use of high-quality silicon material ensures reliable performance and long-term durability. With its low power loss, this ... 2025-07-11 00:37:58
16A45V MBR1645CT High Frequency Switch Power Supply Schottky Barrier Diodes Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) ... 2025-02-08 13:30:04
20A45V High Frequency Switch Power Supply Schottky Barrier Diodes For On-Board DC/ DC Conerters MBR2045FCT Part Number Package Die Io (A) VBR VF(... 2025-02-08 13:30:12
... to other electronic components, making it an excellent choice for energy-efficient devices and applications. Additionally, the MOSFET has a low ... 2025-07-11 00:37:58
650V Fast Recovery Diode Power Control High Speed Switching Capability *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
...Switching Speed High Current Density Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) ... 2025-02-08 13:31:40
... 15 0.64 0.73 11 50 - - - 220 150 Product Description: One of the key features of the Low VF Schottky product is its high surge capability. This ... 2025-07-11 00:37:59
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