China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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faster switching high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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faster switching high power igbt

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Fast Switching Speed Low VF Schottky For Power Supply And Solar Energy Product Description: One of the key features of the Low VF Schottky product is ... 2025-07-11 00:37:58
... Typ Typ CS10N60A2 TO-220F N 10 600 ±30 2 4 660 900 32 1609 Product Description: This MOSFET can handle high voltage and is an ideal component for ... 2025-02-08 13:29:45
Low Ciss High Voltage MOSFET For Power Switch Circuit Of Charger And Adapter *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
N Channel High Voltage MOSFET Cool Mos For Power Switch Circuit Of Adaptor And Charger *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
... 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this MOSFET is its low ON resistance, which results in low loss and low ... 2025-02-08 13:29:28
5A650V CS5N65A2 High Switching Speed MOSFET For Power Conversion *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100... 2025-02-08 13:29:29
8A500V CS8N50A2 TO-220F High Voltage MOSFET For Power Switch Circuit Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) ... 2025-02-08 13:29:43
... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-11 00:37:58
...High Voltage MOSFET With Low Gate Charge TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:29
...High Voltage MOSFET 100% Avalanche Tested Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. ... 2025-02-08 13:29:27
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