China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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faster switching high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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faster switching high power igbt

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...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...Power Switch Circuit of Adaptor High Voltage MOSFET Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:29:31
... Typ CS4N65A2 TO-220F N 4 650 ±30 2 4 2220 2570 Product Description: One of the key features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:46
4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252... 2025-07-11 00:37:58
... 3 10 0.34 0.51 0.40 0.60 20 50 3 0.28 11 180 150 Product Description: This product's fast switching capability allows for faster and more ... 2025-02-08 13:31:38
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
...t make it stand out in the market. Firstly, it has a high breakdown voltage, making it suitable for PWM in motor control and industrial automation ... 2025-02-08 13:29:40
... TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:38
... Typ CS16N60A8 TO-220F N 16 600 ±30 3 4 360 480 71 2250 Product Description: One of the key features of the CS High Voltage MOSFET is its low ON ... 2025-02-08 13:29:30
...High Voltage Mosfet For Power Supply Units Fast Switching Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) ... 2025-02-08 13:29:42
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