51 - 60 of 157
mosfet power module
Selling leads
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...POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power ...
2024-12-09 18:59:29
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...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize ...
2024-12-09 18:59:29
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 12:12:55
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 18:59:29
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6MBP100RTA060-01 IGBT Power Module IPM-N 600V 100A Features · Temperature protection provided by directly detecting the junction temperature of the ...
2024-12-09 18:59:29
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...power-good reporting 1 Channel General Purpose FEATURES •Single-Channel High-Side MOSFET Driver •Input Voltage: 3 V to 13 V •Output dV/dt Control ...
2024-12-09 12:29:15
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...MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
2024-12-09 18:59:29
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CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ...
2024-12-09 18:59:29
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...power-good reporting 1 Channel General Purpose FEATURES •Single-Channel High-Side MOSFET Driver •Input Voltage: 3 V to 13 V •Output dV/dt Control ...
2024-12-09 18:59:29
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MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial ...
2024-12-09 12:12:55
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