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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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power mosfet transistors

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MBR1030CT High Current Mosfet TO-220-3L 30-50v DC Blocking Voltage

MBR1030CT, 35CT, 40CT, 45CT, 50CT, 60CT TO-220-3L Plastic-Encapsulate Diodes FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring ... 2024-12-09 21:52:33

MBR1030,35,40,45,50 Dual Channel Mosfet TO-220A Plastic Encapsulated Diodes

MBR1030,35,40,45,50 TO-220A Plastic-Encapsulate Diodes Schottky Bridge Rectifier FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard ... 2024-12-09 21:52:33

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General ... 2024-12-09 18:42:28

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General ... 2024-12-09 21:52:33

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ... 2024-12-09 18:42:28

HXY4410 N Type Transistor Load Switching For Portable Applications

60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ... 2024-12-09 18:42:28

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ... 2024-12-09 21:52:33

HXY4410 N Type Transistor Load Switching For Portable Applications

60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ... 2024-12-09 21:52:33

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TIP127 Darlington Transistor (PNP) FEATURE Medium Power Complementary ... 2024-12-09 18:42:28

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TIP127 Darlington Transistor (PNP) FEATURE Medium Power Complementary ... 2024-12-09 21:52:33

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