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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	TIP127
Type	Semiconductor Triode
Power Mosfet Transistor	TO-126 Plastic Encapsulated
Product ID	TIP122 TIP127
Feature	High DC Current Gain
Collector Power Dissipation	1.25w
Junction Temperature	150℃

Detailed Product Description

TO-126 Plastic-Encapsulate Transistors

TIP122 Darlington Transistor (NPN)

TIP127 Darlington Transistor (PNP)

FEATURE

Medium Power Complementary Silicon Transistors

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

MARKING

TIP122 , TIP127=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

Equivalent Circuit

ORDERING INFORMATION

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	TIP122	TIP127	Unit
VCBO	Collector-Base Voltage	100	-100	V
VCEO	Collector-Emitter Voltage	100	-100	V
VEBO	Emitter-Base Voltage	5	-5	V
I_C	Collector Current -Continuous	5	-5	A
P_C *	Collector Power Dissipation	1.25		W
RθJA	Thermal Resistance Junction to Ambient	100		℃/W
RθJc	Thermal Resistance Junction to Case	8.33		℃/W
T_J	Junction Temperature	150		℃
Tstg	Storage Temperature	-55~+150		℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

TIP122 NPN
Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=1mA,I_E=0	100		V
Collector-emitter breakdown voltage	V_CEO(SUS)	I_C=30mA,I_B=0	100		V
Collector cut-off current	ICBO	V_CB=100V, I_E=0		0.2	mA
Collector cut-off current	ICEO	V_CE=50 V, I_B=0		0.5	mA
Emitter cut-off current	IEBO	V_EB=5 V, I_C=0		2	mA
DC current gain	hFE(1)	V_CE= 3V, I_C=0.5A	1000
DC current gain	hFE(2)	V_CE= 3V, I_C=3 A	1000	12000
Collector-emitter saturation voltage	V_CE(sat)	I_C=3A,I_B=12mA		2	V
Collector-emitter saturation voltage	V_CE(sat)	I_C=5 A,I_B=20mA		4	V
Base-emitter voltage	VBE	V_CE=3V, I_C=3 A		2.5	V
Output Capacitance	Cob	V_CB=10V, I_E=0,f=0.1MHz		200	pF

TIP127 PNP
Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-1mA,I_E=0	-100		V
Collector-emitter breakdown voltage	V_CEO(SUS)	I_C=-30mA,I_B=0	-100		V
Collector cut-off current	ICBO	V_CB=-100V, I_E=0		-0.2	mA
Collector cut-off current	ICEO	V_CE=-50 V, I_B=0		-0.5	mA
Emitter cut-off current	IEBO	V_EB=-5 V, I_C=0		-2	mA
DC current gain	hFE(1)	V_CE=-3V, I_C=-0.5A	1000
DC current gain	hFE(2)	V_CE=-3V, I_C=-3A	1000	12000
Collector-emitter saturation voltage	V_CE(sat)	I_C=-3A,I_B=-12mA		-2	V
Collector-emitter saturation voltage	V_CE(sat)	I_C=-5 A,I_B=-20mA		-4	V
Base-emitter voltage	VBE	V_CE=-3V, I_C=-3 A		-2.5	V
Output Capacitance	Cob	V_CB=-10V, I_E=0,f=0.1MHz		300	pF

* This test is performed with no heat sink at T_a=25℃.

TO-126 Package Outline Dimensions

Product Tags: electronic components triode semiconductor switch

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