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high voltage transistor
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....5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power ...
2024-12-09 18:50:53
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....5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power ...
2024-12-09 21:52:33
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...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS...
2024-12-09 18:50:53
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...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS...
2024-12-09 21:52:33
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...Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 18:42:28
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...Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter...
2024-12-09 18:42:28
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...Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 21:52:33
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...Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter...
2024-12-09 21:52:33
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...Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 18:42:28
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...Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 21:52:33
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