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high power zener diode
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...S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount ...
2024-12-09 18:42:28
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...S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount ...
2024-12-09 21:52:33
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... P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and current ...
2024-12-09 18:45:55
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... P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and current ...
2024-12-09 21:52:33
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..., 50CT, 60CT TO-220-3L Plastic-Encapsulate Diodes FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for ...
2024-12-09 18:42:28
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..., 50CT, 60CT TO-220-3L Plastic-Encapsulate Diodes FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for ...
2024-12-09 21:52:33
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in ...
2024-12-09 18:50:53
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in ...
2024-12-09 21:52:33
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 18:45:20
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 18:45:20
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