211 - 220 of 222
high current rectifier diode
Selling leads
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...High Breakdown Voltage Marking :A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V ...
2024-12-09 21:52:33
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...High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
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...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS...
2024-12-09 18:42:28
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...form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P...
2024-12-09 18:42:28
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...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS...
2024-12-09 21:52:33
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...form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P...
2024-12-09 21:52:33
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... 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z ...
2024-12-09 18:42:28
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... < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z ...
2024-12-09 18:42:28
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...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE High power and current handing capability Lead free product is acquired Surface mount package ...
2024-12-09 18:42:28
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... 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z ...
2024-12-09 21:52:33
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