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dual series switching diode

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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dual series switching diode

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HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ... 2024-12-09 21:52:33

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

...Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 ... 2024-12-09 21:52:33

HXY4410 N Type Transistor Load Switching For Portable Applications

... to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for ... 2024-12-09 18:42:28

HXY4410 N Type Transistor Load Switching For Portable Applications

... to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for ... 2024-12-09 21:52:33

3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise ... 2024-12-09 18:42:28

3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise ... 2024-12-09 21:52:33

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ... 2024-12-09 18:42:28

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ... 2024-12-09 21:52:33

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN). FEATURE Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier ... 2024-12-09 18:42:28

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN). FEATURE Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier ... 2024-12-09 21:52:33

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